deep etching
英 [diːp ˈetʃɪŋ]
美 [diːp ˈetʃɪŋ]
深（度）浸蚀
双语例句
- Effects of Technical Parameters on Etching Rate and Selectivity of Si Deep Trench Using ICP Etching
硅深槽ICP刻蚀中刻蚀条件对形貌的影响 - Study on Etch Selectivity Ratio of Masking Materials in Silicon Deep Etching
硅深刻蚀中掩蔽层材料刻蚀选择比的研究 - The Study On Deep Reactive Ion Etching of Silicon
反应离子深刻蚀硅的研究 - Mask selection and lateral etching control in Si deep etching process technology are studied.
研究了采用等离子刻蚀机对硅进行深槽刻蚀中掩蔽层的选择及横向腐蚀的抑制等工艺问题。 - Bulk micromachining mainly includes combination of bonding and deep etching, pursuit to big mass and small stress, and three dimensional fabrications technology which is the developing direction of new body silicon technology.
体硅工艺主要表现为键合与深刻蚀技术的组合，追求大质量块和低应力以及三维加工。SOI技术是新一代的体硅工艺发展方向； - The new technique for the shape of deep relief structure through etching SHSG withenzyme is proposed and developed.
提出并研究了生化酶化学湿法刻蚀卤化银明胶形成连续深浮雕的新技术； - Then a silicon island array supporting structure is manufactured by deep etching process. Finally a layer of polyimide is spun and cured on the silicon island array.
首先利用传统的光刻胶热熔工艺制作了平面微透镜阵列，然后利用深刻蚀（ICP）制作了一种硅岛阵列支撑结构，在硅岛上涂覆一层聚酰亚胺，并固化，形成柔性的结构。 - A Deep Vertical SiO_2 Etching Technique for AWG Fabrication
适用于阵列波导光栅制作的厚SiO2陡直刻蚀技术 - Deep Reactive Ion Etching ( DRIE) Device in the MEMS Fabrications
用于MEMS器件制造的深反应离子刻蚀设备 - This kind of vacuum devices with frequencies from W band to terahertz using LIGA, DRIE, DXRL, and DRIE deep etching technologies are emerging as a new subject: Micro-Vacuum Electronics.
这一类利用微细加工技术，特别是深刻技术，如LIGA，DEM，DXRL、DRIE等，制作的真空器件，已经形成一门新兴的交叉学科，微真空电子学及相应的技术和应用。 - The deep reactive ion etching device is mainly applied to etching Si materials in the MEMS fabrications area.
深反应离子刻蚀（DRIE）设备，主要应用于MEMS器件制造中Si材料的深槽刻蚀[1]。 - Three main bulk micromachining processes are described in the paper: the LIGA technology, which is mainly for processing of metal, polymer and ceramic, anisotropic silicon etch ( ASE) techniques and deep wet chemical etching of quartz process.
该文主要介绍以加工金属、聚合物以及陶瓷为主的LIGA技术，先进硅刻蚀技术（ASE）和石英晶体深槽湿法刻蚀技术。 - A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.
提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺，用来加工微型隧道加速度计。 - A New Development of Silicon Deep Trench Etching Process
一种新的硅深槽刻蚀技术研究 - The deep wet etching of Pyrex 7740 glass is investigated.
对Pyrex7740玻璃的湿法刻蚀工艺进行了研究。 - Study on Deep Reactive Ion Etching of Polymethylmethacrylate Sheet Microstructure
商品有机玻璃片微结构的深刻蚀研究 - An Electrochemical Deep Etching Technology for Silicon-based MEMS Fabrications
一种用于硅基MEMS加工的深刻蚀技术 - In the fabrication of micro-inertial devices, inductively coupled plasma ( ICP) deep silicon etching is primarily used in the release of comb structure.
在微惯性器件加工中，ICP深硅刻蚀技术主要用于梳齿结构的释放。 - Aluminium target with deep amplitude modulation fabricated by chemical wet etching process
深振幅Al调制靶的化学腐蚀制备工艺研究 - Making method of high deep-width rate, batch production of planar windings with LIGA process and silicon deep etching process is researched in the thesis.
较深入地研究了以LIGA工艺、硅深刻蚀工艺为主的平面绕阻的高深宽比、批量化制作方法。 - Deep reactive ion etching ( Deep-RIE) is one of the most convenient and popular processes in MEMS fabrications.
反应离子深刻蚀（DRIE）是目前MEMS加工中便捷有效的主流加工工艺之一。 - Photo-assisted electrochemical etching ( PAECE) is a newly developed technology for deep wet etching of silicon.
光辅助电化学刻蚀（PAECE）是一种高深宽比的硅刻蚀技术。 - Research on Deep Reactive Ion Etching Technology
反应离子深刻蚀（RIE）技术的研究 - In silicon deep reactive ion etching ( DRIE) using inductively coupled plasma ( ICP) etcher, a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth.
利用自感应耦合等离子（ICP）蚀刻机进行硅深层反应离子刻蚀，得到了几微米宽的狭槽，其轮廓通常为正锥形，即蚀刻槽的宽度随着蚀刻深度的增大而减小。 - Study on deep reactive ion etching of silicon using sf_6/ ccl_2f_2 with o_2 addition
SF6／CCl2F2反应离子深刻蚀硅中加O2的研究 - A Study on Silicon Deep Etching Technology
硅的深槽刻蚀技术研究 - This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching ( DRIE) process is employed.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。 - The fabricating of the micro-needle point adopts isotropic etching technology and the fabricating of the micro-needle hole adopts the deep etching technology. It gives the detailed theory explanation and the study with the experiment to the two kinds of fabricate technologies in the article.
其中微针尖的加工采用各向同性刻蚀技术，微针孔的加工采用各向异性深度刻蚀技术，文中对这两种微加工技术做了详细的理论阐述和实验研究。 - Understood micro-maching technology. Fabricated silicon based micro and nanostructures by ultraviolet exposure, electron-beam lithography and ICP deep etching. 3.
了解微机械加工工艺，采用紫外线曝光、电子束刻蚀、ICP深度刻蚀等工艺并完成硅基微纳结构的加工制备。 - The device uses a deep etching with a shallow etching to shield the "static mirror" effect.
该器件采用一次深刻蚀与一次浅刻蚀，从而屏蔽掉静态镜面的影响。